| PART |
Description |
Maker |
| IXGN60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS[IXYS Corporation]
|
| PBSS5120T PBSS5120T215 |
20 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd
20 V, 1 A PNP low VCEsat (BISS) transistor
20 V 1 A PNP low VCEsat (BISS) transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| 60N60 |
Ultra-low Vce(sat) Igbt
|
IXYS Corporation
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGH31N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGN400N30A3 |
Ultra-Low-Vsat PT IGBT for up to 10kHz Switching
|
IXYS Corporation
|
| MMIX1G120N120A3V1 |
Ultra-Low-Vsat PT IGBT for 3kHz Switching
|
IXYS Corporation
|
| PBSS4140U |
40V Low VCEsat NPN Transistor
40 V low VCEsat NPN transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| SGW23N60UFD SGW23N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
